ion beam epitaxy

例句：

1. 1. Ion beam epitaxy is a technique used in semiconductor manufacturing to grow thin films on silicon wafers.
   离子束外延生长是一种用于半导体制造的技术，用于在硅晶片上生长薄膜。
2. 2. The process of ion beam epitaxy is crucial for the quality and performance of many electronic devices.
   离子束外延生长过程对许多电子设备的质量与性能至关重要。
3. 3. In ion beam epitaxy, a high-energy ion beam is directed onto a substrate to create a thin film layer that can be used as an active layer in devices.
   在离子束外延生长中，高能离子束被导向衬底上以创建一层薄膜，该层可以用作设备中的活性层。